Deposition of WNxCy Using the Allylimido Complexes Cl4„RCN...W„NC3H5...: Effect of NH3 on Film Properties

نویسندگان

  • Hiral M. Ajmera
  • Andrew T. Heitsch
  • Omar J. Bchir
  • David P. Norton
  • Laurel L. Reitfort
  • Lisa McElwee-White
  • Timothy J. Anderson
چکیده

Deposition of WNxCy Using the Allylimido Complexes Cl4„RCN...W„NC3H5...: Effect of NH3 on Film Properties Hiral M. Ajmera,* Andrew T. Heitsch, Omar J. Bchir, David P. Norton,* Laurel L. Reitfort, Lisa McElwee-White, and Timothy J. Anderson* Department of Chemical Engineering, Department of Chemistry, and Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Tungsten allylimido complexes Cl4(RCN)W(NC3H5) as single-source CVD precursors for WNxCy thin films. Correlation of precursor fragmentation to film properties.

A mixture of the tungsten allylimido complexes Cl(4)(RCN)W(NC(3)H(5)) (3a, R = CH(3) and 3b, R = Ph) was tested as a single-source precursor for growth of tungsten nitride (WN(x)) or carbonitride (WN(x)C(y)) thin films. Films deposited from 3a,b below 550 degrees C contained amorphous beta-WN(x)C(y), while those deposited at higher temperatures were polycrystalline. Film growth rates from 3a,b ...

متن کامل

Chemical vapor deposition of WNxCy using the tungsten piperidylhydrazido complex Cl4„CH3CN...W„N-pip...: Deposition, characterization, and diffusion barrier evaluation

The tungsten piperidylhydrazido complex Cl4 CH3CN W N-pip 1 was used for film growth of tungsten carbonitride WNxCy by metal-organic chemical vapor deposition CVD in the absence and presence of ammonia NH3 in H2 carrier. The microstructure of films deposited with NH3 was x-ray amorphous between 300 and 450 °C. The chemical composition of films deposited with NH3 exhibited increased N levels and...

متن کامل

Effect of NH3 on Film Properties of MOCVD Tungsten Nitride from Cl4„CH3CN...W„N iPr..

Thin films of tungsten nitride were deposited from Cl4(CH3CN!W~N Pr) by metallorganic chemical vapor deposition ~MOCVD! in the presence and absence of ammonia (NH3) coreactant. Films were analyzed by X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy ~XPS!. Films grown with NH3 had increased nitrogen levels and decreased carbon and oxygen levels relative to fil...

متن کامل

Deposition of WNxCy from the Tungsten Piperidylhydrazido Complex Cl4(CH3CN)W(N-pip) as a Single-Source Precursor

The tungsten piperidylhydrazido complex Cl4(CH3CN)W(N-pip) (1) was used as a single-source precursor for growth of tungsten carbonitride (WNxCy) by metal-organic chemical vapor deposition (CVD) in H2 carrier. Multiple spectroscopic techniques were used for preliminary evaluation of the suitability of 1 as a precursor and to suggest possible fragmentation pathways. The effect of growth temperatu...

متن کامل

Cl4(PhCN)W(NPh) as a single-source MOCVD precursor for deposition of tungsten nitride (WNx) thin films

The tungsten phenylimido complex Cl4(PhCN)W(NPh) (2b) was tested as a single-source precursor for growth of tungsten nitride (WNx ) thin films, and results were compared to films previously deposited from the isopropylimido complexes Cl4(RCN)W(N i Pr) (1a, R /CH3; 1b, R /Ph). Films deposited from 2b exhibited growth rates ranging from 2 to 21 Å min 1 over a temperature range of 475 /750 8C, and...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008