Deposition of WNxCy Using the Allylimido Complexes Cl4„RCN...W„NC3H5...: Effect of NH3 on Film Properties
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چکیده
Deposition of WNxCy Using the Allylimido Complexes Cl4„RCN...W„NC3H5...: Effect of NH3 on Film Properties Hiral M. Ajmera,* Andrew T. Heitsch, Omar J. Bchir, David P. Norton,* Laurel L. Reitfort, Lisa McElwee-White, and Timothy J. Anderson* Department of Chemical Engineering, Department of Chemistry, and Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA
منابع مشابه
Tungsten allylimido complexes Cl4(RCN)W(NC3H5) as single-source CVD precursors for WNxCy thin films. Correlation of precursor fragmentation to film properties.
A mixture of the tungsten allylimido complexes Cl(4)(RCN)W(NC(3)H(5)) (3a, R = CH(3) and 3b, R = Ph) was tested as a single-source precursor for growth of tungsten nitride (WN(x)) or carbonitride (WN(x)C(y)) thin films. Films deposited from 3a,b below 550 degrees C contained amorphous beta-WN(x)C(y), while those deposited at higher temperatures were polycrystalline. Film growth rates from 3a,b ...
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The tungsten piperidylhydrazido complex Cl4 CH3CN W N-pip 1 was used for film growth of tungsten carbonitride WNxCy by metal-organic chemical vapor deposition CVD in the absence and presence of ammonia NH3 in H2 carrier. The microstructure of films deposited with NH3 was x-ray amorphous between 300 and 450 °C. The chemical composition of films deposited with NH3 exhibited increased N levels and...
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Thin films of tungsten nitride were deposited from Cl4(CH3CN!W~N Pr) by metallorganic chemical vapor deposition ~MOCVD! in the presence and absence of ammonia (NH3) coreactant. Films were analyzed by X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy ~XPS!. Films grown with NH3 had increased nitrogen levels and decreased carbon and oxygen levels relative to fil...
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The tungsten piperidylhydrazido complex Cl4(CH3CN)W(N-pip) (1) was used as a single-source precursor for growth of tungsten carbonitride (WNxCy) by metal-organic chemical vapor deposition (CVD) in H2 carrier. Multiple spectroscopic techniques were used for preliminary evaluation of the suitability of 1 as a precursor and to suggest possible fragmentation pathways. The effect of growth temperatu...
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The tungsten phenylimido complex Cl4(PhCN)W(NPh) (2b) was tested as a single-source precursor for growth of tungsten nitride (WNx ) thin films, and results were compared to films previously deposited from the isopropylimido complexes Cl4(RCN)W(N i Pr) (1a, R /CH3; 1b, R /Ph). Films deposited from 2b exhibited growth rates ranging from 2 to 21 Å min 1 over a temperature range of 475 /750 8C, and...
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